In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors

J. C. Sturm; C. M. Gronet; C. A. King; J. F. Gibbons; S. D. Wilson

doi:10.1109/EDL.1986.26479

In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors

J. C. Sturm
, C. M. Gronet
, C. A. King
, J. F. Gibbons
, S. D. Wilson

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.

Original language	English (US)
Pages (from-to)	577-579
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	7
Issue number	10
DOIs	https://doi.org/10.1109/EDL.1986.26479
State	Published - Oct 1986

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1986.26479

Cite this

@article{f28393d256e94f0fbc196f97e7b00b21,

title = "In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors",

abstract = "Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.",

author = "Sturm, \{J. C.\} and Gronet, \{C. M.\} and King, \{C. A.\} and Gibbons, \{J. F.\} and Wilson, \{S. D.\}",

year = "1986",

month = oct,

doi = "10.1109/EDL.1986.26479",

language = "English (US)",

volume = "7",

pages = "577--579",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors

AU - Sturm, J. C.

AU - Gronet, C. M.

AU - King, C. A.

AU - Gibbons, J. F.

AU - Wilson, S. D.

PY - 1986/10

Y1 - 1986/10

N2 - Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.

AB - Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.

UR - https://www.scopus.com/pages/publications/0022793110

UR - https://www.scopus.com/pages/publications/0022793110#tab=citedBy

U2 - 10.1109/EDL.1986.26479

DO - 10.1109/EDL.1986.26479

M3 - Article

AN - SCOPUS:0022793110

SN - 0741-3106

VL - 7

SP - 577

EP - 579

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors

Abstract

All Science Journal Classification (ASJC) codes

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