Abstract
Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.
Original language | English (US) |
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Pages (from-to) | 577-579 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 7 |
Issue number | 10 |
DOIs | |
State | Published - Oct 1986 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering