In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors

James Christopher Sturm; C. M. Gronet; C. A. King; J. F. Gibbons; S. D. Wilson

doi:10.1109/EDL.1986.26479

In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors

James Christopher Sturm, C. M. Gronet, C. A. King, J. F. Gibbons, S. D. Wilson

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.

Original language	English (US)
Pages (from-to)	577-579
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	7
Issue number	10
DOIs	https://doi.org/10.1109/EDL.1986.26479
State	Published - Jan 1 1986

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Engineering(all)

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10.1109/EDL.1986.26479

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abstract = "Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.",

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AU - Wilson, S. D.

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AB - Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.

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In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors

Abstract

All Science Journal Classification (ASJC) codes

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