In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors

James Christopher Sturm, C. M. Gronet, C. A. King, J. F. Gibbons, S. D. Wilson

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Limited reaction processing (LRP) has been used to achieve the in-situ growth of epitaxial silicon-oxide-doped polysilicon layers. The in-situ growth of these multiple layers was combined with the selective epitaxial growth technique to create structures for MOSFET fabrication. The results of n- and p-channel transistor fabrication utilizing these structures are presented.

Original languageEnglish (US)
Pages (from-to)577-579
Number of pages3
JournalIEEE Electron Device Letters
Volume7
Issue number10
DOIs
StatePublished - Jan 1 1986

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

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