Impurity levels in heterostructures for optical absorption and emission

S. R. Parihar; S. A. Lyon

doi:10.1063/1.110486

Impurity levels in heterostructures for optical absorption and emission

S. R. Parihar, S. A. Lyon

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3 Scopus citations

Abstract

We present calculations showing the effect of placing impurities in quantum wells and heterostructure barriers. With a suitable configuration of the band edge, both the spacing of energy levels and their ordering can be controlled. The results should be of use in designing more flexible impurity infrared detectors and enhancing the radiative efficiency of transitions between impurity levels.

Original language	English (US)
Pages (from-to)	2396-2398
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	17
DOIs	https://doi.org/10.1063/1.110486
State	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.110486

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@article{8438df29651743e59787ffb5a3add8a3,

title = "Impurity levels in heterostructures for optical absorption and emission",

abstract = "We present calculations showing the effect of placing impurities in quantum wells and heterostructure barriers. With a suitable configuration of the band edge, both the spacing of energy levels and their ordering can be controlled. The results should be of use in designing more flexible impurity infrared detectors and enhancing the radiative efficiency of transitions between impurity levels.",

author = "Parihar, {S. R.} and Lyon, {S. A.}",

year = "1993",

doi = "10.1063/1.110486",

language = "English (US)",

volume = "63",

pages = "2396--2398",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Impurity levels in heterostructures for optical absorption and emission

AU - Parihar, S. R.

AU - Lyon, S. A.

PY - 1993

Y1 - 1993

N2 - We present calculations showing the effect of placing impurities in quantum wells and heterostructure barriers. With a suitable configuration of the band edge, both the spacing of energy levels and their ordering can be controlled. The results should be of use in designing more flexible impurity infrared detectors and enhancing the radiative efficiency of transitions between impurity levels.

AB - We present calculations showing the effect of placing impurities in quantum wells and heterostructure barriers. With a suitable configuration of the band edge, both the spacing of energy levels and their ordering can be controlled. The results should be of use in designing more flexible impurity infrared detectors and enhancing the radiative efficiency of transitions between impurity levels.

UR - http://www.scopus.com/inward/record.url?scp=36449006190&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449006190&partnerID=8YFLogxK

U2 - 10.1063/1.110486

DO - 10.1063/1.110486

M3 - Article

AN - SCOPUS:36449006190

SN - 0003-6951

VL - 63

SP - 2396

EP - 2398

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Impurity levels in heterostructures for optical absorption and emission

Abstract

All Science Journal Classification (ASJC) codes

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