@inproceedings{30eb4ee5b91d4b12903de9361b763080,
title = "IMPROVING THE QUALITY OF A HETEROEPITAXIAL CaF//2 OVERLAYER BY RAPID POST ANNEALING.",
abstract = "Post anneals of short duration at high temperature can improve the quality of CaF//2 films grown by molecular beam epitaxy (MBE) on Si(100). Anneals at 1100 degree C for 20 sec in Ar improved the ratio of backscattered 1. 8 MeV He**4 ions in the aligned to random direction from as-grown values of . 07 to . 26 to post post-anneal values of . 03 to . 045. The post-annealed films also show improved resistance to chemical etching and mechanical stress and increased dielectric breakdown voltages.",
author = "Loren Pfeiffer and Phillips, {Julia M.} and Smith, {T. P.} and Augustyniak, {W. M.} and West, {K. W.}",
year = "1985",
language = "English (US)",
isbn = "0931837006",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "401--406",
editor = "D.K. Biegelsen and Shank, {Charles V.}",
booktitle = "Materials Research Society Symposia Proceedings",
}