A straightforward, one-step solvent-vapor-annealing process was used to improve the electrical properties of a solution-processable, p-type organic semiconductor, triethylsilylethnyl anthradithiophene (TES ADT). A bottom-contact thin-film transistors (TFT) on silicon, on which TES ADT was built and tested, on which TES ADt was directly spin-coated. The highly doped silicon served as a common gate electrode for all the transistors on the same chip, and the thermally grown silicon-dioxide served as the gate dielectric. Gold source and drain electrodes were defined on the dielectric surface using electron -beam evaporation through a shadow mask. The effects of solvent-vapor-annealing process with TES ADT of varying polarity was also examined. It was observed that the solvent vapor was able to penetrate the organic semiconductor thin films.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering