Improving Defect-Based Quantum Emitters in Silicon Carbide via Inorganic Passivation

Keyphrases

• Color Centers 100%
• Passivation Layer 66%
• Photostability 66%
• Carbon Antisite-vacancy Pair 33%
• State Stability 33%
• Luminescent Properties 33%
• 4H-SiC 33%
• Defect Passivation 33%
• Scanning Confocal Microscopy 33%
• AlN Passivation 33%
• Epitaxial AlN 33%
• AlN-SiC 33%
• Single-photon Emitters 33%
• Center-based 33%

Material Science

• Silicon Carbide 100%
• Color Center 100%

Engineering

• Passivation Layer 50%
• State Stability 25%