Improved organic thin-film transistor performance using novel self-assembled monolayers

M. McDowell, I. G. Hill, J. E. McDermott, S. L. Bernasek, J. Schwartz

Research output: Contribution to journalArticle

197 Scopus citations

Abstract

Pentacene-based organic thin-film transistors have been fabricated using a phosphonate-linked anthracene self-assembled monolayer as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Vast improvements in the subthreshold slope and threshold voltage are observed compared to control devices fabricated without the buffer. Both observations are consistent with a greatly reduced density of charge trapping states at the semiconductor-dielectric interface effected by introduction of the self-assembled monolayer.

Original languageEnglish (US)
Article number073505
JournalApplied Physics Letters
Volume88
Issue number7
DOIs
StatePublished - Feb 24 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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