Pentacene-based organic thin-film transistors have been fabricated using a phosphonate-linked anthracene self-assembled monolayer as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Vast improvements in the subthreshold slope and threshold voltage are observed compared to control devices fabricated without the buffer. Both observations are consistent with a greatly reduced density of charge trapping states at the semiconductor-dielectric interface effected by introduction of the self-assembled monolayer.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)