Improved electrical properties and crystalline quality of II-VI heterostructures for quantum cascade lasers

Thor Axtmann Garcia; Songwoung Hong; Maria Tamargo; Joel De Jesus; Vasilios Deligiannakis; Arvind Ravikumar; Claire F. Gmachl; Aidong Shen

doi:10.1116/1.4803837

Improved electrical properties and crystalline quality of II-VI heterostructures for quantum cascade lasers

Thor Axtmann Garcia, Songwoung Hong, Maria Tamargo, Joel De Jesus, Vasilios Deligiannakis, Arvind Ravikumar, Claire F. Gmachl, Aidong Shen

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Abstract

The authors report on investigations of the doping, lattice mismatch, and interface quality for the molecular beam epitaxial growth of ZnCdSe/ZnCdMgSe/InP quantum cascade structures with improved electrical, structural, and spectral properties. An improved doping strategy, the control of the lattice mismatch to less than 0.25%, and the incorporation of growth interruptions have led to quantum cascade structures with good I-V characteristics and electroluminescence emission up to room temperature, with an emission energy of 230 meV (5.4 μm) and a full-width at half maximum of 41 meV at 80 K, the best device properties reported so far for this material system. It is expected that the addition of waveguide layers in the structure will lead to the observation of lasing.

Original language	English (US)
Article number	03C133
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4803837
State	Published - May 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Improved electrical properties and crystalline quality of II-VI heterostructures for quantum cascade lasers",

abstract = "The authors report on investigations of the doping, lattice mismatch, and interface quality for the molecular beam epitaxial growth of ZnCdSe/ZnCdMgSe/InP quantum cascade structures with improved electrical, structural, and spectral properties. An improved doping strategy, the control of the lattice mismatch to less than 0.25%, and the incorporation of growth interruptions have led to quantum cascade structures with good I-V characteristics and electroluminescence emission up to room temperature, with an emission energy of 230 meV (5.4 μm) and a full-width at half maximum of 41 meV at 80 K, the best device properties reported so far for this material system. It is expected that the addition of waveguide layers in the structure will lead to the observation of lasing.",

author = "{Axtmann Garcia}, Thor and Songwoung Hong and Maria Tamargo and {De Jesus}, Joel and Vasilios Deligiannakis and Arvind Ravikumar and Gmachl, {Claire F.} and Aidong Shen",

note = "Funding Information: The authors gratefully acknowledge the support from NSF Grant Nos. EEC-0540832 (MIRTHE-ERC) and HRD-0833180 (CENSES). ",

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T1 - Improved electrical properties and crystalline quality of II-VI heterostructures for quantum cascade lasers

AU - Axtmann Garcia, Thor

AU - Hong, Songwoung

AU - Tamargo, Maria

AU - De Jesus, Joel

AU - Deligiannakis, Vasilios

AU - Ravikumar, Arvind

AU - Gmachl, Claire F.

AU - Shen, Aidong

N1 - Funding Information: The authors gratefully acknowledge the support from NSF Grant Nos. EEC-0540832 (MIRTHE-ERC) and HRD-0833180 (CENSES).

PY - 2013/5

Y1 - 2013/5

N2 - The authors report on investigations of the doping, lattice mismatch, and interface quality for the molecular beam epitaxial growth of ZnCdSe/ZnCdMgSe/InP quantum cascade structures with improved electrical, structural, and spectral properties. An improved doping strategy, the control of the lattice mismatch to less than 0.25%, and the incorporation of growth interruptions have led to quantum cascade structures with good I-V characteristics and electroluminescence emission up to room temperature, with an emission energy of 230 meV (5.4 μm) and a full-width at half maximum of 41 meV at 80 K, the best device properties reported so far for this material system. It is expected that the addition of waveguide layers in the structure will lead to the observation of lasing.

AB - The authors report on investigations of the doping, lattice mismatch, and interface quality for the molecular beam epitaxial growth of ZnCdSe/ZnCdMgSe/InP quantum cascade structures with improved electrical, structural, and spectral properties. An improved doping strategy, the control of the lattice mismatch to less than 0.25%, and the incorporation of growth interruptions have led to quantum cascade structures with good I-V characteristics and electroluminescence emission up to room temperature, with an emission energy of 230 meV (5.4 μm) and a full-width at half maximum of 41 meV at 80 K, the best device properties reported so far for this material system. It is expected that the addition of waveguide layers in the structure will lead to the observation of lasing.

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Improved electrical properties and crystalline quality of II-VI heterostructures for quantum cascade lasers

Abstract

All Science Journal Classification (ASJC) codes

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