TY - JOUR
T1 - Improved electrical properties and crystalline quality of II-VI heterostructures for quantum cascade lasers
AU - Axtmann Garcia, Thor
AU - Hong, Songwoung
AU - Tamargo, Maria
AU - De Jesus, Joel
AU - Deligiannakis, Vasilios
AU - Ravikumar, Arvind
AU - Gmachl, Claire F.
AU - Shen, Aidong
N1 - Funding Information:
The authors gratefully acknowledge the support from NSF Grant Nos. EEC-0540832 (MIRTHE-ERC) and HRD-0833180 (CENSES).
PY - 2013/5
Y1 - 2013/5
N2 - The authors report on investigations of the doping, lattice mismatch, and interface quality for the molecular beam epitaxial growth of ZnCdSe/ZnCdMgSe/InP quantum cascade structures with improved electrical, structural, and spectral properties. An improved doping strategy, the control of the lattice mismatch to less than 0.25%, and the incorporation of growth interruptions have led to quantum cascade structures with good I-V characteristics and electroluminescence emission up to room temperature, with an emission energy of 230 meV (5.4 μm) and a full-width at half maximum of 41 meV at 80 K, the best device properties reported so far for this material system. It is expected that the addition of waveguide layers in the structure will lead to the observation of lasing.
AB - The authors report on investigations of the doping, lattice mismatch, and interface quality for the molecular beam epitaxial growth of ZnCdSe/ZnCdMgSe/InP quantum cascade structures with improved electrical, structural, and spectral properties. An improved doping strategy, the control of the lattice mismatch to less than 0.25%, and the incorporation of growth interruptions have led to quantum cascade structures with good I-V characteristics and electroluminescence emission up to room temperature, with an emission energy of 230 meV (5.4 μm) and a full-width at half maximum of 41 meV at 80 K, the best device properties reported so far for this material system. It is expected that the addition of waveguide layers in the structure will lead to the observation of lasing.
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U2 - 10.1116/1.4803837
DO - 10.1116/1.4803837
M3 - Article
AN - SCOPUS:84878359675
SN - 2166-2746
VL - 31
JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
IS - 3
M1 - 03C133
ER -