Improved electrical properties and crystalline quality of II-VI heterostructures for quantum cascade lasers

Thor Axtmann Garcia, Songwoung Hong, Maria Tamargo, Joel De Jesus, Vasilios Deligiannakis, Arvind Ravikumar, Claire F. Gmachl, Aidong Shen

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The authors report on investigations of the doping, lattice mismatch, and interface quality for the molecular beam epitaxial growth of ZnCdSe/ZnCdMgSe/InP quantum cascade structures with improved electrical, structural, and spectral properties. An improved doping strategy, the control of the lattice mismatch to less than 0.25%, and the incorporation of growth interruptions have led to quantum cascade structures with good I-V characteristics and electroluminescence emission up to room temperature, with an emission energy of 230 meV (5.4 μm) and a full-width at half maximum of 41 meV at 80 K, the best device properties reported so far for this material system. It is expected that the addition of waveguide layers in the structure will lead to the observation of lasing.

Original languageEnglish (US)
Article number03C133
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume31
Issue number3
DOIs
StatePublished - May 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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