Improved diamond surfaces following lift-off and plasma treatments as observed by x-ray absorption spectroscopy

Alastair Stacey; Virginia S. Drumm; Barbara A. Fairchild; Kumar Ganesan; Sergey Rubanov; Rafi Kalish; Bruce C.C. Cowie; Steven Prawer; Alon Hoffman

doi:10.1063/1.3585106

Improved diamond surfaces following lift-off and plasma treatments as observed by x-ray absorption spectroscopy

Alastair Stacey
, Virginia S. Drumm
, Barbara A. Fairchild
, Kumar Ganesan
, Sergey Rubanov
, Rafi Kalish
, Bruce C.C. Cowie
, Steven Prawer
, Alon Hoffman

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We have investigated the nature of the residual damage in diamond crystals following the ion implantation/graphitization "lift-off" process, using near-edge x-ray absorption fine structure spectroscopy and transmission electron microscopy. A defective but crystalline interface is found, which displays dense pre-edge unoccupied states and an almost complete loss of the core-level C 1^s exciton signature. This residual crystalline damage is resistant to standard chemical etching, however a hydrogen plasma treatment is found to completely recover a pristine diamond surface. Analysis and removal of residual ion-induced damage is considered crucial to the performance of many diamond device architectures.

Original language	English (US)
Article number	181907
Journal	Applied Physics Letters
Volume	98
Issue number	18
DOIs	https://doi.org/10.1063/1.3585106
State	Published - May 2 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3585106

Cite this

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title = "Improved diamond surfaces following lift-off and plasma treatments as observed by x-ray absorption spectroscopy",

abstract = "We have investigated the nature of the residual damage in diamond crystals following the ion implantation/graphitization {"}lift-off{"} process, using near-edge x-ray absorption fine structure spectroscopy and transmission electron microscopy. A defective but crystalline interface is found, which displays dense pre-edge unoccupied states and an almost complete loss of the core-level C 1s exciton signature. This residual crystalline damage is resistant to standard chemical etching, however a hydrogen plasma treatment is found to completely recover a pristine diamond surface. Analysis and removal of residual ion-induced damage is considered crucial to the performance of many diamond device architectures.",

author = "Alastair Stacey and Drumm, \{Virginia S.\} and Fairchild, \{Barbara A.\} and Kumar Ganesan and Sergey Rubanov and Rafi Kalish and Cowie, \{Bruce C.C.\} and Steven Prawer and Alon Hoffman",

year = "2011",

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doi = "10.1063/1.3585106",

language = "English (US)",

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AU - Stacey, Alastair

AU - Drumm, Virginia S.

AU - Fairchild, Barbara A.

AU - Ganesan, Kumar

AU - Rubanov, Sergey

AU - Kalish, Rafi

AU - Cowie, Bruce C.C.

AU - Prawer, Steven

AU - Hoffman, Alon

PY - 2011/5/2

Y1 - 2011/5/2

N2 - We have investigated the nature of the residual damage in diamond crystals following the ion implantation/graphitization "lift-off" process, using near-edge x-ray absorption fine structure spectroscopy and transmission electron microscopy. A defective but crystalline interface is found, which displays dense pre-edge unoccupied states and an almost complete loss of the core-level C 1s exciton signature. This residual crystalline damage is resistant to standard chemical etching, however a hydrogen plasma treatment is found to completely recover a pristine diamond surface. Analysis and removal of residual ion-induced damage is considered crucial to the performance of many diamond device architectures.

AB - We have investigated the nature of the residual damage in diamond crystals following the ion implantation/graphitization "lift-off" process, using near-edge x-ray absorption fine structure spectroscopy and transmission electron microscopy. A defective but crystalline interface is found, which displays dense pre-edge unoccupied states and an almost complete loss of the core-level C 1s exciton signature. This residual crystalline damage is resistant to standard chemical etching, however a hydrogen plasma treatment is found to completely recover a pristine diamond surface. Analysis and removal of residual ion-induced damage is considered crucial to the performance of many diamond device architectures.

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SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181907

ER -

Improved diamond surfaces following lift-off and plasma treatments as observed by x-ray absorption spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

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