Abstract
We have investigated the nature of the residual damage in diamond crystals following the ion implantation/graphitization "lift-off" process, using near-edge x-ray absorption fine structure spectroscopy and transmission electron microscopy. A defective but crystalline interface is found, which displays dense pre-edge unoccupied states and an almost complete loss of the core-level C 1s exciton signature. This residual crystalline damage is resistant to standard chemical etching, however a hydrogen plasma treatment is found to completely recover a pristine diamond surface. Analysis and removal of residual ion-induced damage is considered crucial to the performance of many diamond device architectures.
| Original language | English (US) |
|---|---|
| Article number | 181907 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 18 |
| DOIs | |
| State | Published - May 2 2011 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)