IMPROVED CRYSTAL PERFECTION IN ZONE-RECRYSTALLIZED Si FILMS ON SiO//2.

Loren Pfeiffer, K. W. West, Scott Paine, D. C. Joy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

The authors review recent results of graphite strip heater Si-on-insulator (SOI) research covered are Recrystallization of SOI films on 100 mm wafers, a model of subboundary pattern formation in SOI films, low defect density SOI films using ultra slow scanning of the melt zone, and low defect density SOI films using patterned openings in the cap oxide overlayer.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsD.K. Biegelsen, Charles V. Shank
PublisherMaterials Research Soc
Pages583-592
Number of pages10
ISBN (Print)0931837006
StatePublished - 1985
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume35
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'IMPROVED CRYSTAL PERFECTION IN ZONE-RECRYSTALLIZED Si FILMS ON SiO//2.'. Together they form a unique fingerprint.

Cite this