Perovskite light=emitting diodes (LEDs) have experienced a rapid increase in efficiency over the last several years and are now regarded as promising low=cost devices for displays and communication systems. However, it is often challenging to employ ZnO, a well=studied electron transport material, in perovskite LEDs due to chemical instability at the ZnO/perovskite interface and charge injection imbalance caused by the relatively high conductivity of ZnO. In this work, we address these problems by depositing an ultrathin Al2O3interlayer at the ZnO/perovskite interface, allowing the fabrication of green=emitting perovskite LEDs with a maximum luminance of 21815 cd/m2. Using atomic layer deposition, we can precisely control the Al2O3thickness and thus fine=tune the electron injection from ZnO, allowing us to enhance the efficiency and operational stability of our LEDs.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- atomic layer deposition
- charge balance
- metal halide perovskite