TY - JOUR
T1 - Improved cathode buffer layer to decrease exciton recombination in organic planar heterojunction solar cells
AU - Verreet, Bregt
AU - Malinowski, Pawel E.
AU - Niesen, Bjoern
AU - Cheyns, David
AU - Heremans, Paul
AU - Stesmans, Andre
AU - Rand, Barry P.
N1 - Funding Information:
The research leading to these results has received funding from the European Community's Seventh Framework Programme (FP7/2007-2013) under Grant Agreement 287818 of the X10D project. Additionally, the authors wish to thank Erwin Vandenplas for processing support and sample preparation.
PY - 2013/1/28
Y1 - 2013/1/28
N2 - We show that an advanced cathode buffer design, consisting of bathocuproine/3,4,9,10-perylenetetracarboxylic bis-benzimidazole/Ag, increases the short-circuit current of organic planar heterojunction cells and reduces the J-V slope at reverse voltages. We study the physical origin of these effects by measuring reflectivity, voltage dependent external quantum efficiency, and voltage dependent photoluminescence. Our findings suggest that the observed effects are mainly associated with a voltage dependent polaron-induced exciton quenching in the C60 layer. Finally, this improved cathode buffer design is applied to a diindeno[1,2,3-cd:1′,2′,3′-lm]perylene/ C70 based cell, leading to a considerable planar heterojunction efficiency of 5.7%.
AB - We show that an advanced cathode buffer design, consisting of bathocuproine/3,4,9,10-perylenetetracarboxylic bis-benzimidazole/Ag, increases the short-circuit current of organic planar heterojunction cells and reduces the J-V slope at reverse voltages. We study the physical origin of these effects by measuring reflectivity, voltage dependent external quantum efficiency, and voltage dependent photoluminescence. Our findings suggest that the observed effects are mainly associated with a voltage dependent polaron-induced exciton quenching in the C60 layer. Finally, this improved cathode buffer design is applied to a diindeno[1,2,3-cd:1′,2′,3′-lm]perylene/ C70 based cell, leading to a considerable planar heterojunction efficiency of 5.7%.
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U2 - 10.1063/1.4789852
DO - 10.1063/1.4789852
M3 - Article
AN - SCOPUS:84873577073
SN - 0003-6951
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 043301
ER -