Imprint lithography with sub-10 nm feature size and high throughput

Stephen Y. Chou, Peter R. Krauss

Research output: Contribution to journalArticle

342 Scopus citations

Abstract

Nanoimprint lithography, a high-throughput, low-cost, nonconventional lithographic method proposed and demonstrated recently, has been developed and investigated. Nanoimprint lithography has demonstrated 10 nm feature size, 40 nm pitch, vertical and smooth sidewalls, and nearly 90° corners. Further experimental study indicates that the ultimate resolution of nanoimprint lithography could be sub-10 nm, the imprint process is repeatable, and the mold is durable. In addition, uniformity over a 15 mm by 18 mm area was demonstrated and the uniformity area can be much larger if a better designed press is used. Nanoimprint lithography over a non-flat surface has also been achieved. Finally, nanoimprint lithography has been successfully used for fabricating nanoscale photodetectors, silicon quantum-dot, quantum-wire, and ring transistors.

Original languageEnglish (US)
Pages (from-to)237-240
Number of pages4
JournalMicroelectronic Engineering
Volume35
Issue number1-4
DOIs
StatePublished - Feb 1997
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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