Imprint lithography with 25-nanometer resolution

Stephen Y. Chou, Peter R. Krauss, Preston J. Renstrom

Research output: Contribution to journalArticlepeer-review

2353 Scopus citations


A high-throughput lithographic method with 25-nanometer resolution and smooth vertical sidewalls is proposed and demonstrated. The technique uses compression molding to create a thickness contrast pattern in a thin resist film carried on a substrate, followed by anisotropic etching to transfer the pattern through the entire resist thickness. Metal patterns with a feature size of 25 nanometers and a period of 70 nanometers were fabricated with the use of resist templates created by imprint lithography in combination with a lift-off process. With further development, imprint lithography should allow fabrication of sub-10-nanometer structures and may become a commercially viable technique for manufacturing integrated circuits and other nanodevices.

Original languageEnglish (US)
Pages (from-to)85-87
Number of pages3
Issue number5258
StatePublished - Apr 5 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General


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