Implant isolation of silicon two-dimensional electron gases at 4.2 K

Chiao Ti Huang, Jiun Yun Li, James C. Sturm

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Successful lateral electrical isolation of silicon 2-D electron gases (2DEGs) at liquid helium temperature (4.2 K) by ion implantation is demonstrated. The sheet resistance of the implanted regions can be achieved as high as 1 × 1013Ωat 4.2 K. Thermal stability up to 550°C makes the technique compatible with most subsequent processing steps to fabricate silicon quantum devices. It has also been confirmed that the 2DEG quality is not degraded by the ion implantation, based on a comparison of Hall mobility of implant-isolated samples with conventional reactive-ion-etching- defined samples.

Original languageEnglish (US)
Article number6381440
Pages (from-to)21-23
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number1
DOIs
StatePublished - Jan 7 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • 2-D electron gas (2DEG)
  • Ion implantation
  • Si/SiGe heterostructure
  • isolation

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