Abstract
We compare the energy gap of the ν=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation-doped quantum-well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long-range and short-range disorders play in the 5/2 state and observe that the long-range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.
Original language | English (US) |
---|---|
Article number | 206806 |
Journal | Physical review letters |
Volume | 106 |
Issue number | 20 |
DOIs | |
State | Published - May 18 2011 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy