Impact of disorder on the 5/2 fractional quantum Hall state

W. Pan, N. Masuhara, N. S. Sullivan, K. W. Baldwin, K. W. West, L. N. Pfeiffer, D. C. Tsui

Research output: Contribution to journalArticlepeer-review

54 Scopus citations


We compare the energy gap of the ν=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation-doped quantum-well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long-range and short-range disorders play in the 5/2 state and observe that the long-range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.

Original languageEnglish (US)
Article number206806
JournalPhysical review letters
Issue number20
StatePublished - May 18 2011

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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