TY - JOUR
T1 - Impact of blend morphology on interface state recombination in bulk heterojunction organic solar cells
AU - Bouthinon, Benjamin
AU - Clerc, Raphaël
AU - Vaillant, Jérôme
AU - Verilhac, Jean Marie
AU - Faure-Vincent, Jérôme
AU - Djurado, David
AU - Ionica, Irina
AU - Man, Gabriel
AU - Gras, Antoine
AU - Pananakakis, Georges
AU - Gwoziecki, Romain
AU - Kahn, Antoine
N1 - Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.
PY - 2015/2/18
Y1 - 2015/2/18
N2 - This work is a reinvestigation of the impact of blend morphology and thermal annealing on the electrical performance of regioregular-P3HT:PC60 BM bulk heterojunction organic solar cells. The morphological, structural, and electrical properties of the blend are experimentally investigated with atomic force microscopy, X-ray diffraction, and time-of-fl ight measurements. Current- voltage characteristics of photodiode devices are measured in the dark and under illumination. Finally, the existence of exponential electronic band tails due to gap states is experimentally confirmed by measuring the device spectral response in the subband gap regime. This method reveals the existence of a large density of gap states, which is partially and systematically reduced by thermal annealing. When the band tails are properly accounted for in the drift and diffusion simulations, experimentally measured charge transport characteristics, under both dark and illuminated conditions and as a function of annealing time, can be satisfactorily reproduced. This work further confirms the critical impact of tails states on the performance of solar cells.
AB - This work is a reinvestigation of the impact of blend morphology and thermal annealing on the electrical performance of regioregular-P3HT:PC60 BM bulk heterojunction organic solar cells. The morphological, structural, and electrical properties of the blend are experimentally investigated with atomic force microscopy, X-ray diffraction, and time-of-fl ight measurements. Current- voltage characteristics of photodiode devices are measured in the dark and under illumination. Finally, the existence of exponential electronic band tails due to gap states is experimentally confirmed by measuring the device spectral response in the subband gap regime. This method reveals the existence of a large density of gap states, which is partially and systematically reduced by thermal annealing. When the band tails are properly accounted for in the drift and diffusion simulations, experimentally measured charge transport characteristics, under both dark and illuminated conditions and as a function of annealing time, can be satisfactorily reproduced. This work further confirms the critical impact of tails states on the performance of solar cells.
UR - http://www.scopus.com/inward/record.url?scp=85027929508&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85027929508&partnerID=8YFLogxK
U2 - 10.1002/adfm.201401633
DO - 10.1002/adfm.201401633
M3 - Article
AN - SCOPUS:85027929508
SN - 1616-301X
VL - 25
SP - 1090
EP - 1101
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 7
ER -