Impact of a Low Concentration of Dopants on the Distribution of Gap States in a Molecular Semiconductor

Xin Lin, Geoffrey E. Purdum, Yadong Zhang, Stephen Barlow, Seth R. Marder, Yueh Lin Loo, Antoine Kahn

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

We investigate the distribution of valence and tail states in copper phthalocyanine (CuPc) upon the introduction of minute amounts of the p-dopant molybdenum tris[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd)3), using a combination of electron spectroscopy and carrier transport measurements. Density of gap states, conductivity, and hole-hopping activation energy are measured. We observe the progressive filling (and deactivation) of the deepest tail states by charges introduced by the dopants, as well as significant broadening of the CuPc density of states. Simulations relate this broadening to the electrostatic and structural disorder induced by the dopant in the CuPc matrix.

Original languageEnglish (US)
Pages (from-to)2677-2684
Number of pages8
JournalChemistry of Materials
Volume28
Issue number8
DOIs
StatePublished - May 10 2016

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Impact of a Low Concentration of Dopants on the Distribution of Gap States in a Molecular Semiconductor'. Together they form a unique fingerprint.

Cite this