IIIB-6 Analysis of Current Transport and Charge Trapping in Ultrathin Nitrided Oxide MIS Capacitors

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	1972
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	31
Issue number	12
DOIs	https://doi.org/10.1109/T-ED.1984.21854
State	Published - Dec 1984

All Science Journal Classification (ASJC) codes

@article{8c5dc77c06f9481c99dc76e08fe2d763,

title = "IIIB-6 Analysis of Current Transport and Charge Trapping in Ultrathin Nitrided Oxide MIS Capacitors",

author = "Chang, {S. T.} and Lyon, {S. A.}",

year = "1984",

month = dec,

doi = "10.1109/T-ED.1984.21854",

language = "English (US)",

volume = "31",

pages = "1972",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - IIIB-6 Analysis of Current Transport and Charge Trapping in Ultrathin Nitrided Oxide MIS Capacitors

AU - Chang, S. T.

AU - Lyon, S. A.

PY - 1984/12

Y1 - 1984/12

UR - http://www.scopus.com/inward/record.url?scp=84918451736&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84918451736&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1984.21854

DO - 10.1109/T-ED.1984.21854

M3 - Article

AN - SCOPUS:84918451736

VL - 31

SP - 1972

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

ER -