IIIB-3 Limited Reaction Processing: In-Situ Epitaxial Silicon Thin-Oxide Polysilicon Layers for MOS Transistors

James Christopher Sturm, C. M. Gronet, J. F. Gibbons

Research output: Contribution to journalArticle

1 Scopus citations
Original languageEnglish (US)
Pages (from-to)1847-1848
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume33
Issue number11
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

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