@article{b100f486bf6a460ba15a3a84e686bdfe,
title = "IIIB-3 Limited Reaction Processing: In-Situ Epitaxial Silicon Thin-Oxide Polysilicon Layers for MOS Transistors",
author = "Sturm, {J. C.} and Gronet, {C. M.} and Gibbons, {J. F.}",
year = "1986",
month = nov,
doi = "10.1109/T-ED.1986.22783",
language = "English (US)",
volume = "33",
pages = "1847--1848",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}