III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

Yu Song, Rajaram Bhat, Tzu Yung Huang, Pranav Badami, Chung En Zah, Claire F. Gmachl

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Quantum cascade (QC) detectors in the GaN/AlxGa1-xN material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al0.5Ga0.5N as barriers are used in the active layers. The QC detectors operates around 4 μm, with a peak responsivity of up to ∼100 μA/W and a detectivity of up to 108 Jones at the background limited infrared performance temperature around 140 K.

Original languageEnglish (US)
Article number182104
JournalApplied Physics Letters
Volume105
Issue number18
DOIs
StatePublished - Nov 3 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'III-nitride quantum cascade detector grown by metal organic chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this