IIB-5 Current Gain-Early Voltage Products in Graded-Base Si/Si1−xGex/Si Heterojunction Bipolar Transistors

E. J. Prinz; J. C. Sturm

doi:10.1109/16.158708

IIB-5 Current Gain-Early Voltage Products in Graded-Base Si/Si_1−xGe_x/Si Heterojunction Bipolar Transistors

E. J. Prinz
, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	2695-2696
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	38
Issue number	12
DOIs	https://doi.org/10.1109/16.158708
State	Published - Dec 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.158708

Cite this

@article{2ba96364e1b84795b948db19982db9a9,

title = "IIB-5 Current Gain-Early Voltage Products in Graded-Base Si/Si1−xGex/Si Heterojunction Bipolar Transistors",

author = "Prinz, \{E. J.\} and Sturm, \{J. C.\}",

year = "1991",

month = dec,

doi = "10.1109/16.158708",

language = "English (US)",

volume = "38",

pages = "2695--2696",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - IIB-5 Current Gain-Early Voltage Products in Graded-Base Si/Si1−xGex/Si Heterojunction Bipolar Transistors

AU - Prinz, E. J.

AU - Sturm, J. C.

PY - 1991/12

Y1 - 1991/12

UR - https://www.scopus.com/pages/publications/0026390015

UR - https://www.scopus.com/pages/publications/0026390015#tab=citedBy

U2 - 10.1109/16.158708

DO - 10.1109/16.158708

M3 - Article

AN - SCOPUS:0026390015

SN - 0018-9383

VL - 38

SP - 2695

EP - 2696

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

IIB-5 Current Gain-Early Voltage Products in Graded-Base Si/Si_1−xGe_x/Si Heterojunction Bipolar Transistors

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this