IIB-5 Current Gain-Early Voltage Products in Graded-Base Si/Si1−xGex/Si Heterojunction Bipolar Transistors

IIB-5 Current Gain-Early Voltage Products in Graded-Base Si/Si_1−xGe_x/Si Heterojunction Bipolar Transistors

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	2695-2696
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	38
Issue number	12
DOIs	https://doi.org/10.1109/16.158708
State	Published - Dec 1991

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title = "IIB-5 Current Gain-Early Voltage Products in Graded-Base Si/Si1−xGex/Si Heterojunction Bipolar Transistors",

author = "Prinz, {E. J.} and Sturm, {J. C.}",

year = "1991",

month = dec,

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pages = "2695--2696",

journal = "IEEE Transactions on Electron Devices",

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AU - Sturm, J. C.

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