IIB-2 Interface State Generation by Negative Gate-bias Irradiation of MOS Structures

P. U. Kenkare, Stephen Aplin Lyon

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)2603-2604
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume36
Issue number11
DOIs
StatePublished - Jan 1 1989

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

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