IIB-2 Interface State Generation by Negative Gate-bias Irradiation of MOS Structures

P. U. Kenkare; S. A. Lyon

doi:10.1109/16.43700

IIB-2 Interface State Generation by Negative Gate-bias Irradiation of MOS Structures

P. U. Kenkare, S. A. Lyon

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	2603-2604
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	36
Issue number	11
DOIs	https://doi.org/10.1109/16.43700
State	Published - Nov 1989

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{d575f796fdd949988bbf51930540b041,

title = "IIB-2 Interface State Generation by Negative Gate-bias Irradiation of MOS Structures",

author = "Kenkare, {P. U.} and Lyon, {S. A.}",

year = "1989",

month = nov,

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language = "English (US)",

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journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

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T1 - IIB-2 Interface State Generation by Negative Gate-bias Irradiation of MOS Structures

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AU - Lyon, S. A.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

IIB-2 Interface State Generation by Negative Gate-bias Irradiation of MOS Structures

All Science Journal Classification (ASJC) codes

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