Keyphrases
Gallium Arsenide
100%
Extended X-ray Absorption Fine Structure (EXAFS)
100%
X-ray Absorption Spectroscopy
100%
Si-doped
100%
Defective Semiconductor
100%
P-type
66%
Near-edge X-ray Absorption Fine Structure (NEXAFS)
66%
Fluorescence Detection
33%
Scanning Tunneling Microscopy
33%
Electrical Activity
33%
Microscopic Techniques
33%
Deactivation
33%
Electron Carrier
33%
Free Electrons
33%
Local Vibrational Modes
33%
Synchrotron Beamline
33%
Concentration Point
33%
Inactivity
33%
Auto-compensation
33%
Atom Trapping
33%
Secretory Immunoglobulin A (SIgA)
33%
Biochemistry, Genetics and Molecular Biology
Extended X-Ray Absorption Fine Structure
100%
X-Ray Absorption near Edge Structure
100%
Absorption Spectroscopy
100%
Point Defect
100%
Fluorescence Spectroscopy
50%
Absorption
50%
Electric Activity
50%
Scanning Tunneling Microscopy
50%
Physics
Absorption Spectroscopy
100%
Point Defect
100%
X-Ray Absorption near Edge Structure
100%
Fine Structure
50%
Synchrotron
50%
Scanning Tunneling Microscopy
50%
Beamline
50%
Free Electron
50%
Material Science
Gallium Arsenide
100%
Absorption Spectroscopy
100%
Point Defect
100%
Extended X-Ray Absorption Fine Structure
66%
X-Ray Absorption near Edge Structure
66%
Fluorescence Spectroscopy
33%
Chemistry
Absorption Spectroscopy
100%
Crystal Point Defect
100%
Near Edge X-Ray Absorption Fine Structure
100%
Fluorescence Spectroscopy
50%
Scanning Tunneling Microscopy
50%
Free Electron
50%