Ideal amorphous semiconductors

Morrel H. Cohen, J. Singh, F. Yonezawa

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

We have examined the electronic structure of amorphous silicon (or germanium) in an ideal network structure using a tight-binding model with all first and second neighbor couplings. Matrix elements were taken from the crystalline band structure and deformation potentials. Quantitative disorder is relatively small. Topological disorder and the quantitative variations in dihedral angle give rise to limit-like behavior at the gap edges. The band tails are narrow and the minimum deep in such an ideal amorphous semiconductor.

Original languageEnglish (US)
Pages (from-to)55-60
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume35-36
Issue numberPART 1
DOIs
StatePublished - Jan 1 1980
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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