Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's

K. Pangal; J. C. Sturm; S. Wagner

Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's

K. Pangal
, J. C. Sturm
, S. Wagner

Research output: Contribution to journal › Conference article › peer-review

Abstract

It has recently been discovered that a room temperature hydrogen plasma could reduce the crystallization time at 600 °C of hydrogenated amorphous silicon films by a factor of five to a reasonable four hours [1]. Further, the process can be spatially controlled by masking with a patterned oxide. In this abstract, we report for the first time the successful application of this method to an all low-temperature (≤600 °C) TFT fabrication process. Good performance with mobility of 40-35 cm²/Vs and an ON/OFF ratio of 4×10⁵ has been achieved with a crystallization time of only four hours.

Original language	English (US)
Pages (from-to)	261-264
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1998
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 6 1998 → Dec 9 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's",

abstract = "It has recently been discovered that a room temperature hydrogen plasma could reduce the crystallization time at 600 °C of hydrogenated amorphous silicon films by a factor of five to a reasonable four hours [1]. Further, the process can be spatially controlled by masking with a patterned oxide. In this abstract, we report for the first time the successful application of this method to an all low-temperature (≤600 °C) TFT fabrication process. Good performance with mobility of 40-35 cm2/Vs and an ON/OFF ratio of 4×105 has been achieved with a crystallization time of only four hours.",

author = "K. Pangal and Sturm, \{J. C.\} and S. Wagner",

year = "1998",

language = "English (US)",

pages = "261--264",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

}

TY - JOUR

T1 - Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's

AU - Pangal, K.

AU - Sturm, J. C.

AU - Wagner, S.

PY - 1998

Y1 - 1998

N2 - It has recently been discovered that a room temperature hydrogen plasma could reduce the crystallization time at 600 °C of hydrogenated amorphous silicon films by a factor of five to a reasonable four hours [1]. Further, the process can be spatially controlled by masking with a patterned oxide. In this abstract, we report for the first time the successful application of this method to an all low-temperature (≤600 °C) TFT fabrication process. Good performance with mobility of 40-35 cm2/Vs and an ON/OFF ratio of 4×105 has been achieved with a crystallization time of only four hours.

AB - It has recently been discovered that a room temperature hydrogen plasma could reduce the crystallization time at 600 °C of hydrogenated amorphous silicon films by a factor of five to a reasonable four hours [1]. Further, the process can be spatially controlled by masking with a patterned oxide. In this abstract, we report for the first time the successful application of this method to an all low-temperature (≤600 °C) TFT fabrication process. Good performance with mobility of 40-35 cm2/Vs and an ON/OFF ratio of 4×105 has been achieved with a crystallization time of only four hours.

UR - https://www.scopus.com/pages/publications/0032271793

UR - https://www.scopus.com/pages/publications/0032271793#tab=citedBy

M3 - Conference article

AN - SCOPUS:0032271793

SN - 0163-1918

SP - 261

EP - 264

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's

Abstract

All Science Journal Classification (ASJC) codes

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