It has recently been discovered that a room temperature hydrogen plasma could reduce the crystallization time at 600 °C of hydrogenated amorphous silicon films by a factor of five to a reasonable four hours . Further, the process can be spatially controlled by masking with a patterned oxide. In this abstract, we report for the first time the successful application of this method to an all low-temperature (≤600 °C) TFT fabrication process. Good performance with mobility of 40-35 cm2/Vs and an ON/OFF ratio of 4×105 has been achieved with a crystallization time of only four hours.
|Original language||English (US)|
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - Dec 1 1998|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering