Abstract
It has recently been discovered that a room temperature hydrogen plasma could reduce the crystallization time at 600 °C of hydrogenated amorphous silicon films by a factor of five to a reasonable four hours [1]. Further, the process can be spatially controlled by masking with a patterned oxide. In this abstract, we report for the first time the successful application of this method to an all low-temperature (≤600 °C) TFT fabrication process. Good performance with mobility of 40-35 cm2/Vs and an ON/OFF ratio of 4×105 has been achieved with a crystallization time of only four hours.
Original language | English (US) |
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Pages (from-to) | 261-264 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
State | Published - Dec 1 1998 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering