Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's

K. Pangal, James Christopher Sturm, S. Wagner

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

It has recently been discovered that a room temperature hydrogen plasma could reduce the crystallization time at 600 °C of hydrogenated amorphous silicon films by a factor of five to a reasonable four hours [1]. Further, the process can be spatially controlled by masking with a patterned oxide. In this abstract, we report for the first time the successful application of this method to an all low-temperature (≤600 °C) TFT fabrication process. Good performance with mobility of 40-35 cm2/Vs and an ON/OFF ratio of 4×105 has been achieved with a crystallization time of only four hours.

Original languageEnglish (US)
Pages (from-to)261-264
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1998

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's'. Together they form a unique fingerprint.

  • Cite this