A wet chemical preparation involving de-ionized water, hydrogen peroxide, and hydrofluoric acid is used to passivate germanium (Ge) (100) surfaces. Infrared absorption spectroscopy and x-ray photoemission spectroscopy studies show that oxide free and hydrogen-terminated Ge (100) surfaces can be obtained. As in the case for silicon (100) surfaces etched in hydrofluoric acid, hydrogen-terminated Ge (100) surfaces are atomically rough, with primarily mono- and dihydride terminations.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)