Hydrogen passivation of germanium (100) surface using wet chemical preparation

Sandrine Rivillon; Yves J. Chabal; Fabrice Amy; Antoine Kahn

doi:10.1063/1.2142084

Hydrogen passivation of germanium (100) surface using wet chemical preparation

Sandrine Rivillon, Yves J. Chabal, Fabrice Amy, Antoine Kahn

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154 Scopus citations

Abstract

A wet chemical preparation involving de-ionized water, hydrogen peroxide, and hydrofluoric acid is used to passivate germanium (Ge) (100) surfaces. Infrared absorption spectroscopy and x-ray photoemission spectroscopy studies show that oxide free and hydrogen-terminated Ge (100) surfaces can be obtained. As in the case for silicon (100) surfaces etched in hydrofluoric acid, hydrogen-terminated Ge (100) surfaces are atomically rough, with primarily mono- and dihydride terminations.

Original language	English (US)
Article number	253101
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	25
DOIs	https://doi.org/10.1063/1.2142084
State	Published - 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2142084

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title = "Hydrogen passivation of germanium (100) surface using wet chemical preparation",

abstract = "A wet chemical preparation involving de-ionized water, hydrogen peroxide, and hydrofluoric acid is used to passivate germanium (Ge) (100) surfaces. Infrared absorption spectroscopy and x-ray photoemission spectroscopy studies show that oxide free and hydrogen-terminated Ge (100) surfaces can be obtained. As in the case for silicon (100) surfaces etched in hydrofluoric acid, hydrogen-terminated Ge (100) surfaces are atomically rough, with primarily mono- and dihydride terminations.",

author = "Sandrine Rivillon and Chabal, {Yves J.} and Fabrice Amy and Antoine Kahn",

note = "Funding Information: This work was supported by the NSF (CHE-0415652), the Princeton MRSEC (DMR-0213706), and Umicore. The authors are grateful to M. M. Frank (IBM), K. A Bratland (Rutgers), and A. Wan (Princeton) for stimulating discussions. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2005",

doi = "10.1063/1.2142084",

language = "English (US)",

volume = "87",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Hydrogen passivation of germanium (100) surface using wet chemical preparation

AU - Rivillon, Sandrine

AU - Chabal, Yves J.

AU - Amy, Fabrice

AU - Kahn, Antoine

N1 - Funding Information: This work was supported by the NSF (CHE-0415652), the Princeton MRSEC (DMR-0213706), and Umicore. The authors are grateful to M. M. Frank (IBM), K. A Bratland (Rutgers), and A. Wan (Princeton) for stimulating discussions. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2005

Y1 - 2005

N2 - A wet chemical preparation involving de-ionized water, hydrogen peroxide, and hydrofluoric acid is used to passivate germanium (Ge) (100) surfaces. Infrared absorption spectroscopy and x-ray photoemission spectroscopy studies show that oxide free and hydrogen-terminated Ge (100) surfaces can be obtained. As in the case for silicon (100) surfaces etched in hydrofluoric acid, hydrogen-terminated Ge (100) surfaces are atomically rough, with primarily mono- and dihydride terminations.

AB - A wet chemical preparation involving de-ionized water, hydrogen peroxide, and hydrofluoric acid is used to passivate germanium (Ge) (100) surfaces. Infrared absorption spectroscopy and x-ray photoemission spectroscopy studies show that oxide free and hydrogen-terminated Ge (100) surfaces can be obtained. As in the case for silicon (100) surfaces etched in hydrofluoric acid, hydrogen-terminated Ge (100) surfaces are atomically rough, with primarily mono- and dihydride terminations.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Hydrogen passivation of germanium (100) surface using wet chemical preparation

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