Hybrid ferromagnetic/semiconductor heterostructures for spintronics

N. Samarth; S. H. Chun; K. C. Ku; S. J. Potashnik; P. Schiffer

doi:10.1016/S0038-1098(03)00340-5

Hybrid ferromagnetic/semiconductor heterostructures for spintronics

N. Samarth, S. H. Chun, K. C. Ku, S. J. Potashnik, P. Schiffer

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study 'hybrid' ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.

Original language	English (US)
Pages (from-to)	173-179
Number of pages	7
Journal	Solid State Communications
Volume	127
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1098(03)00340-5
State	Published - Jul 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

Keywords

A. Ferromagnetic semiconductor
B. Spintronics
C. Heterostructure

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10.1016/S0038-1098(03)00340-5

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title = "Hybrid ferromagnetic/semiconductor heterostructures for spintronics",

abstract = "Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study 'hybrid' ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.",

keywords = "A. Ferromagnetic semiconductor, B. Spintronics, C. Heterostructure",

author = "N. Samarth and Chun, {S. H.} and Ku, {K. C.} and Potashnik, {S. J.} and P. Schiffer",

note = "Funding Information: We acknowledge support from grants ONR N00014-99-1-0071, -0716, DARPA/ONR N00014-99-1-1093 and N00014-00-1-0951, and NSF DMR 01-01318.",

year = "2003",

month = jul,

doi = "10.1016/S0038-1098(03)00340-5",

language = "English (US)",

volume = "127",

pages = "173--179",

journal = "Solid State Communications",

issn = "0038-1098",

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number = "2",

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TY - JOUR

T1 - Hybrid ferromagnetic/semiconductor heterostructures for spintronics

AU - Samarth, N.

AU - Chun, S. H.

AU - Ku, K. C.

AU - Potashnik, S. J.

AU - Schiffer, P.

N1 - Funding Information: We acknowledge support from grants ONR N00014-99-1-0071, -0716, DARPA/ONR N00014-99-1-1093 and N00014-00-1-0951, and NSF DMR 01-01318.

PY - 2003/7

Y1 - 2003/7

N2 - Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study 'hybrid' ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.

AB - Heterostructures that integrate conventional semiconductors with ferromagnetic semiconductors and ferromagnetic metals are important for developing a framework for semiconductor spintronics. We describe recent efforts to study 'hybrid' ferromagnetic/semiconductor heterostructures that combine conventional III-V and II-VI semiconductors with the ferromagnetic semiconductor (Ga,Mn)As and the ferromagnetic metal MnAs. We focus on the characteristics of two novel classes of heterostructures: (a) (Ga,Mn)As/AlAs/MnAs magnetic tunnel junctions (MTJs) that provide an all-electrical scheme for probing spin injection from metals into GaAs and (b) n-ZnSe/(Ga,Mn)As heterojunction diodes that surprisingly exhibit a magnetically-driven photoconductivity.

KW - A. Ferromagnetic semiconductor

KW - B. Spintronics

KW - C. Heterostructure

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U2 - 10.1016/S0038-1098(03)00340-5

DO - 10.1016/S0038-1098(03)00340-5

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SN - 0038-1098

VL - 127

SP - 173

EP - 179

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -

Hybrid ferromagnetic/semiconductor heterostructures for spintronics

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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