Abstract
We report hybrid amorphous (a-Si)/nanocrystalline (nc-Si) Schottky diodes for rectification at high frequencies. All fabrication steps are done at < 200 ° C, making them compatible with processing on plastic. The diodes have a high current density (5 A/cm2 at 1 V and 100 A\cm2 at 2 V) and on-to-off current ratio (over 1000 for bias voltages of 1/-8V). A 0.01mm2 hybrid diode has a series resistance of 200 Ω and a capacitance of 7 pF, leading to a cutoff frequency of 110 MHz. As a half-wave rectifier driving a parallel 1- MΩ resistive and 100-nF capacitive load, the dc rectified voltage drops at frequencies > 10 MHz, with a - 3 dB} point at 70 MHz.
Original language | English (US) |
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Article number | 6758370 |
Pages (from-to) | 425-427 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 35 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2014 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Keywords
- Power conversion efficiency
- Schottky diode
- amorphous silicon (a-Si)
- half-wave
- high frequency
- nanocrystalline silicon (nc-Si)
- rectifier