Hybrid amorphous/nanocrystalline silicon schottky diodes for high frequency rectification

Josue Sanz-Robinson, Warren Rieutort-Louis, Yingzhe Hu, Liechao Huang, Naveen Verma, Sigurd Wagner, James C. Sturm

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

We report hybrid amorphous (a-Si)/nanocrystalline (nc-Si) Schottky diodes for rectification at high frequencies. All fabrication steps are done at < 200 ° C, making them compatible with processing on plastic. The diodes have a high current density (5 A/cm2 at 1 V and 100 A\cm2 at 2 V) and on-to-off current ratio (over 1000 for bias voltages of 1/-8V). A 0.01mm2 hybrid diode has a series resistance of 200 Ω and a capacitance of 7 pF, leading to a cutoff frequency of 110 MHz. As a half-wave rectifier driving a parallel 1- MΩ resistive and 100-nF capacitive load, the dc rectified voltage drops at frequencies > 10 MHz, with a - 3 dB} point at 70 MHz.

Original languageEnglish (US)
Article number6758370
Pages (from-to)425-427
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number4
DOIs
StatePublished - Apr 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Power conversion efficiency
  • Schottky diode
  • amorphous silicon (a-Si)
  • half-wave
  • high frequency
  • nanocrystalline silicon (nc-Si)
  • rectifier

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