TY - JOUR
T1 - How do electronic carriers cross Si-bound alkyl monolayers?
AU - Salomon, Adi
AU - Boecking, Till
AU - Chan, Calvin K.
AU - Amy, Fabrice
AU - Girshevitz, Olga
AU - Cahen, David
AU - Kahn, Antoine
PY - 2005/12/31
Y1 - 2005/12/31
N2 - Electron transport through Si-C bound alkyl chains, sandwiched between n-Si and Hg, is characterized by two distinct types of barriers, each dominating in a different voltage range. At low voltage, the current depends strongly on temperature but not on molecular length, suggesting transport by thermionic emission over a barrier in the Si. At higher voltage, the current decreases exponentially with molecular length, suggesting transport limited by tunneling through the molecules. The tunnel barrier is estimated, from transport and photoemission data, to be ∼1.5eV with a 0.25me effective mass.
AB - Electron transport through Si-C bound alkyl chains, sandwiched between n-Si and Hg, is characterized by two distinct types of barriers, each dominating in a different voltage range. At low voltage, the current depends strongly on temperature but not on molecular length, suggesting transport by thermionic emission over a barrier in the Si. At higher voltage, the current decreases exponentially with molecular length, suggesting transport limited by tunneling through the molecules. The tunnel barrier is estimated, from transport and photoemission data, to be ∼1.5eV with a 0.25me effective mass.
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U2 - 10.1103/PhysRevLett.95.266807
DO - 10.1103/PhysRevLett.95.266807
M3 - Article
C2 - 16486388
AN - SCOPUS:30344453097
SN - 0031-9007
VL - 95
JO - Physical review letters
JF - Physical review letters
IS - 26
M1 - 266807
ER -