Hot electron electroluminescence in AlGaAs/GaAs heterostructures

C. L. Petersen, M. R. Frei, S. A. Lyon

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We have observed hot electron electroluminescence in AlGaAs/GaAs heterostructures. The luminescence experiment gives us sufficient energy resolution to separate out ballistically launched (unrelaxed) electrons from those that have emitted one or more longitudinal optical (LO) phonons. The electroluminescence consists of a series of peaks spaced by one LO phonon energy. In addition to giving us information about the electron distribution, the position of the first, unrelaxed, peak provides a new way to accurately measure the conduction band offset in semiconductor heterostructures.

Original languageEnglish (US)
Pages (from-to)1919-1923
Number of pages5
JournalSolid State Electronics
Issue number12
StatePublished - Dec 1989

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


  • Ballistic Transport
  • Band Offsets
  • Electroluminescence
  • Electron Spectroscopy
  • Hot Electron Transport


Dive into the research topics of 'Hot electron electroluminescence in AlGaAs/GaAs heterostructures'. Together they form a unique fingerprint.

Cite this