Abstract
We have observed hot electron electroluminescence in AlGaAs/GaAs heterostructures. The luminescence experiment gives us sufficient energy resolution to separate out ballistically launched (unrelaxed) electrons from those that have emitted one or more longitudinal optical (LO) phonons. The electroluminescence consists of a series of peaks spaced by one LO phonon energy. In addition to giving us information about the electron distribution, the position of the first, unrelaxed, peak provides a new way to accurately measure the conduction band offset in semiconductor heterostructures.
Original language | English (US) |
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Pages (from-to) | 1919-1923 |
Number of pages | 5 |
Journal | Solid State Electronics |
Volume | 32 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1989 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Keywords
- Ballistic Transport
- Band Offsets
- Electroluminescence
- Electron Spectroscopy
- Hot Electron Transport