Effective hole mobility enhancements of 50% at room temperature and over 100% at 90 K, compared to all-Si controlled devices, are demonstrated by placing a buried epitaxial GexSi1-x layer 7.5 to 10.0 nm beneath the gate oxide of a PMOS transistor. Also mobility degradation caused by misfit dislocations in the inversion region is seen in structures with GexSi1-x layers that exceed the equilibrium critical thickness.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Jan 1992|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering