Hole Mobility Enhancement in MOS-Gated GexSi1-x /Si Heterostructure Inversion Layers

P. M. Garone, V. Venkataraman, James Christopher Sturm

Research output: Contribution to journalArticle

92 Scopus citations

Abstract

Effective hole mobility enhancements of 50% at room temperature and over 100% at 90 K, compared to all-Si controlled devices, are demonstrated by placing a buried epitaxial GexSi1-x layer 7.5 to 10.0 nm beneath the gate oxide of a PMOS transistor. Also mobility degradation caused by misfit dislocations in the inversion region is seen in structures with GexSi1-x layers that exceed the equilibrium critical thickness.

Original languageEnglish (US)
Pages (from-to)56-58
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number1
DOIs
StatePublished - Jan 1 1992

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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