Abstract
Effective hole mobility enhancements of 50% at room temperature and over 100% at 90 K, compared to all-Si controlled devices, are demonstrated by placing a buried epitaxial GexSi1-x layer 7.5 to 10.0 nm beneath the gate oxide of a PMOS transistor. Also mobility degradation caused by misfit dislocations in the inversion region is seen in structures with GexSi1-x layers that exceed the equilibrium critical thickness.
Original language | English (US) |
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Pages (from-to) | 56-58 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 13 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1992 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering