Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

P. M. Garone; V. Venkataraman; J. C. Sturm

doi:10.1109/55.79566

Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

P. M. Garone
, V. Venkataraman
, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

In this paper the confinement of carriers in a MOS-gated GexSi1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/GexSi1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.

Original language	English (US)
Pages (from-to)	230-232
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	5
DOIs	https://doi.org/10.1109/55.79566
State	Published - May 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.79566

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@article{a372af1e81c24a988df38667b5035b63,

title = "Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures",

abstract = "In this paper the confinement of carriers in a MOS-gated GexSi1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/GexSi1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.",

author = "Garone, \{P. M.\} and V. Venkataraman and Sturm, \{J. C.\}",

year = "1991",

month = may,

doi = "10.1109/55.79566",

language = "English (US)",

volume = "12",

pages = "230--232",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

AU - Garone, P. M.

AU - Venkataraman, V.

AU - Sturm, J. C.

PY - 1991/5

Y1 - 1991/5

N2 - In this paper the confinement of carriers in a MOS-gated GexSi1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/GexSi1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.

AB - In this paper the confinement of carriers in a MOS-gated GexSi1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/GexSi1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.

UR - https://www.scopus.com/pages/publications/0026157461

UR - https://www.scopus.com/pages/publications/0026157461#tab=citedBy

U2 - 10.1109/55.79566

DO - 10.1109/55.79566

M3 - Article

AN - SCOPUS:0026157461

SN - 0741-3106

VL - 12

SP - 230

EP - 232

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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