Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

P. M. Garone; V. Venkataraman; J. C. Sturm

doi:10.1109/55.79566

Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

P. M. Garone, V. Venkataraman, J. C. Sturm

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Abstract

In this paper the confinement of carriers in a MOS-gated GexSi1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/GexSi1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.

Original language	English (US)
Pages (from-to)	230-232
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	5
DOIs	https://doi.org/10.1109/55.79566
State	Published - May 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.79566

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abstract = "In this paper the confinement of carriers in a MOS-gated GexSi1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/GexSi1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.",

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year = "1991",

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N2 - In this paper the confinement of carriers in a MOS-gated GexSi1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/GexSi1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.

AB - In this paper the confinement of carriers in a MOS-gated GexSi1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/GexSi1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.

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Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

Abstract

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