Hole Confinement in Mos-Gated GeXSi1-x/Si Heterostructures

P. M. Garone, V. Venkataraman, James Christopher Sturm

Research output: Contribution to journalArticlepeer-review

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Abstract

In this paper the confinement of carriers in a MOS-gated GexSi1-x heterostructure is numerically modeled and experimentally confirmed. The structure uses a MOS gate to modulate the hole density at a buried Si/GexSi1-x interface. Numerical modeling is used to predict the maximum number of carriers achievable at the interface as a function of the structural design, and clear experimental evidence for such carrier confinement is given.

Original languageEnglish (US)
Pages (from-to)230-232
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number5
DOIs
StatePublished - Jan 1 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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