Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics

Sushobhan Avasthi; William E. McClain; Gabriel Man; Antoine Kahn; Jeffrey Schwartz; James C. Sturm

doi:10.1063/1.4803446

Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics

Sushobhan Avasthi, William E. McClain, Gabriel Man, Antoine Kahn, Jeffrey Schwartz, James C. Sturm

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198 Scopus citations

Abstract

In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si_1-xGe_x on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction - between titanium oxide and crystalline silicon - where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80-100 °C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO₂/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell.

Original language	English (US)
Article number	203901
Journal	Applied Physics Letters
Volume	102
Issue number	20
DOIs	https://doi.org/10.1063/1.4803446
State	Published - May 20 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4803446

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@article{799cd86ae9da4b38ab410fc50f56ef38,

title = "Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics",

abstract = "In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1-xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction - between titanium oxide and crystalline silicon - where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80-100 °C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell.",

author = "Sushobhan Avasthi and McClain, \{William E.\} and Gabriel Man and Antoine Kahn and Jeffrey Schwartz and Sturm, \{James C.\}",

note = "Funding Information: This work was primarily supported by the DOE Sunshot Grant No. DE-EE0005315 and National Science Foundation Grant No. CHE-0924104, and also by the National Science Foundation Princeton MRSEC Grant (DMR-0819860). Gabriel Man acknowledges the Ph.D. fellowship from Natural Sciences and Engineering Research Council of Canada (NSERC). Will McClain acknowledges support from National Science Foundation IGERT: Nanotechnology for Clean Energy (DGE-0903661).",

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doi = "10.1063/1.4803446",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics

AU - Avasthi, Sushobhan

AU - McClain, William E.

AU - Man, Gabriel

AU - Kahn, Antoine

AU - Schwartz, Jeffrey

AU - Sturm, James C.

N1 - Funding Information: This work was primarily supported by the DOE Sunshot Grant No. DE-EE0005315 and National Science Foundation Grant No. CHE-0924104, and also by the National Science Foundation Princeton MRSEC Grant (DMR-0819860). Gabriel Man acknowledges the Ph.D. fellowship from Natural Sciences and Engineering Research Council of Canada (NSERC). Will McClain acknowledges support from National Science Foundation IGERT: Nanotechnology for Clean Energy (DGE-0903661).

PY - 2013/5/20

Y1 - 2013/5/20

N2 - In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1-xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction - between titanium oxide and crystalline silicon - where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80-100 °C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell.

AB - In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1-xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction - between titanium oxide and crystalline silicon - where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80-100 °C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell.

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JF - Applied Physics Letters

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Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics

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