In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1-xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction - between titanium oxide and crystalline silicon - where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80-100 °C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - May 20 2013|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)