Abstract
In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1-xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction - between titanium oxide and crystalline silicon - where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80-100 °C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell.
Original language | English (US) |
---|---|
Article number | 203901 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 20 |
DOIs | |
State | Published - May 20 2013 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)