Hole-blocking crystalline-silicon/titanium-oxide heterojunction with very low interface recombination velocity

Janam Jhaveri, Sushobhan Avasthi, Gabriel Man, William E. McClain, Ken Nagamatsu, Antoine Kahn, Jeffrey Schwartz, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Scopus citations

Abstract

We demonstrate a hole-blocking crystalline-silicon/titanium-oxide heterojunction that can be fabricated by a modified MOCVD process at only 100 °C substrate temperature. Ultra thin layers of only 1-4 nm TiO2 can be reliably deposited on silicon with no pinholes. Band alignment at the Si/TiO2, experimentally determined using surface spectroscopy, confirms that Si/TiO2 interface has a large barrier at the valence band, which blocks holes. The hole-blocking characteristics allow the Si/TiO2 heterojunction solar cells to achieve power conversion efficiencies > 7%. Finally, the electrical quality of the Si/TiO2 interface was characterized in terms of interface recombination velocity. We show that annealed Si/TiO2 interfaces can achieve recombination velocities of ∼ 200 cm/s.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3292-3296
Number of pages5
ISBN (Print)9781479932993
DOIs
StatePublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Keywords

  • Heterojunction
  • Photovoltaic cells
  • Silicon
  • Titanium

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