@inproceedings{d97d6a42cd004ca4af5620a01bb54ae3,
title = "Hole-blocking crystalline-silicon/titanium-oxide heterojunction with very low interface recombination velocity",
abstract = "We demonstrate a hole-blocking crystalline-silicon/titanium-oxide heterojunction that can be fabricated by a modified MOCVD process at only 100 °C substrate temperature. Ultra thin layers of only 1-4 nm TiO2 can be reliably deposited on silicon with no pinholes. Band alignment at the Si/TiO2, experimentally determined using surface spectroscopy, confirms that Si/TiO2 interface has a large barrier at the valence band, which blocks holes. The hole-blocking characteristics allow the Si/TiO2 heterojunction solar cells to achieve power conversion efficiencies > 7%. Finally, the electrical quality of the Si/TiO2 interface was characterized in terms of interface recombination velocity. We show that annealed Si/TiO2 interfaces can achieve recombination velocities of ∼ 200 cm/s.",
keywords = "Heterojunction, Photovoltaic cells, Silicon, Titanium",
author = "Janam Jhaveri and Sushobhan Avasthi and Gabriel Man and McClain, {William E.} and Ken Nagamatsu and Antoine Kahn and Jeffrey Schwartz and Sturm, {James C.}",
year = "2013",
doi = "10.1109/PVSC.2013.6745154",
language = "English (US)",
isbn = "9781479932993",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3292--3296",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
address = "United States",
note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",
}