Highly stable amorphous-silicon thin-film transistors on clear plastic

Bahman Hekmatshoar; Kunigunde H. Cherenack; Alex Z. Kattamis; Ke Long; Sigurd Wagner; James C. Sturm

doi:10.1063/1.2963481

Highly stable amorphous-silicon thin-film transistors on clear plastic

Bahman Hekmatshoar, Kunigunde H. Cherenack, Alex Z. Kattamis, Ke Long, Sigurd Wagner, James C. Sturm

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5× 105 Vcm, the threshold voltage shift extrapolated to only ∼1.2 V after ten years. This stability is achieved by a high deposition temperature for the gate silicon nitride insulator which reduces charge trapping and high hydrogen dilution during a-Si:H growth to reduce defect creation in a-Si:H. This gate field of 2.5× 105 Vcm is sufficient to drive phosphorescent organic light emitting diodes (OLEDs) at a brightness of 1000 Cd m2. The half-life of the TFT current is over ten years, slightly longer than the luminescence half-life of high quality green OLEDs.

Original language	English (US)
Article number	032103
Journal	Applied Physics Letters
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.2963481
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2963481

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title = "Highly stable amorphous-silicon thin-film transistors on clear plastic",

abstract = "Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5× 105 Vcm, the threshold voltage shift extrapolated to only ∼1.2 V after ten years. This stability is achieved by a high deposition temperature for the gate silicon nitride insulator which reduces charge trapping and high hydrogen dilution during a-Si:H growth to reduce defect creation in a-Si:H. This gate field of 2.5× 105 Vcm is sufficient to drive phosphorescent organic light emitting diodes (OLEDs) at a brightness of 1000 Cd m2. The half-life of the TFT current is over ten years, slightly longer than the luminescence half-life of high quality green OLEDs.",

author = "Bahman Hekmatshoar and Cherenack, {Kunigunde H.} and Kattamis, {Alex Z.} and Ke Long and Sigurd Wagner and Sturm, {James C.}",

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T1 - Highly stable amorphous-silicon thin-film transistors on clear plastic

AU - Hekmatshoar, Bahman

AU - Cherenack, Kunigunde H.

AU - Kattamis, Alex Z.

AU - Long, Ke

AU - Wagner, Sigurd

AU - Sturm, James C.

N1 - Funding Information: The authors would like to thank the DuPont Company for technical collaboration and the US Display Consortium for support of this research.

PY - 2008

Y1 - 2008

N2 - Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5× 105 Vcm, the threshold voltage shift extrapolated to only ∼1.2 V after ten years. This stability is achieved by a high deposition temperature for the gate silicon nitride insulator which reduces charge trapping and high hydrogen dilution during a-Si:H growth to reduce defect creation in a-Si:H. This gate field of 2.5× 105 Vcm is sufficient to drive phosphorescent organic light emitting diodes (OLEDs) at a brightness of 1000 Cd m2. The half-life of the TFT current is over ten years, slightly longer than the luminescence half-life of high quality green OLEDs.

AB - Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5× 105 Vcm, the threshold voltage shift extrapolated to only ∼1.2 V after ten years. This stability is achieved by a high deposition temperature for the gate silicon nitride insulator which reduces charge trapping and high hydrogen dilution during a-Si:H growth to reduce defect creation in a-Si:H. This gate field of 2.5× 105 Vcm is sufficient to drive phosphorescent organic light emitting diodes (OLEDs) at a brightness of 1000 Cd m2. The half-life of the TFT current is over ten years, slightly longer than the luminescence half-life of high quality green OLEDs.

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Highly stable amorphous-silicon thin-film transistors on clear plastic

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