Highly stable amorphous-silicon thin-film transistors on clear plastic

Bahman Hekmatshoar, Kunigunde H. Cherenack, Alex Z. Kattamis, Ke Long, Sigurd Wagner, James C. Sturm

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76 Scopus citations

Abstract

Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5× 105 Vcm, the threshold voltage shift extrapolated to only ∼1.2 V after ten years. This stability is achieved by a high deposition temperature for the gate silicon nitride insulator which reduces charge trapping and high hydrogen dilution during a-Si:H growth to reduce defect creation in a-Si:H. This gate field of 2.5× 105 Vcm is sufficient to drive phosphorescent organic light emitting diodes (OLEDs) at a brightness of 1000 Cd m2. The half-life of the TFT current is over ten years, slightly longer than the luminescence half-life of high quality green OLEDs.

Original languageEnglish (US)
Article number032103
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
StatePublished - Aug 4 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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