Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

K. C. Ku; S. J. Potashnik; R. F. Wang; S. H. Chun; P. Schiffer; N. Samarth; M. J. Seong; A. Mascarenhas; E. Johnston-Halperin; R. C. Myers; A. C. Gossard; D. D. Awschalom

doi:10.1063/1.1564285

Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

K. C. Ku, S. J. Potashnik, R. F. Wang, S. H. Chun, P. Schiffer, N. Samarth, M. J. Seong, A. Mascarenhas, E. Johnston-Halperin, R. C. Myers, A. C. Gossard, D. D. Awschalom

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Abstract

The Curie temperatures up to 150 K were reported in low-temperature annealed [Ga,Mn]As epilayers. The higher Curie temperatures were found to result from an enhanced free hole density. It was found that in addition to the carrier concentration, the sample thickness limited the maximum attainable Curie temperature in the material.

Original language	English (US)
Pages (from-to)	2302-2304
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	14
DOIs	https://doi.org/10.1063/1.1564285
State	Published - Apr 7 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1564285

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title = "Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers",

abstract = "The Curie temperatures up to 150 K were reported in low-temperature annealed [Ga,Mn]As epilayers. The higher Curie temperatures were found to result from an enhanced free hole density. It was found that in addition to the carrier concentration, the sample thickness limited the maximum attainable Curie temperature in the material.",

author = "Ku, {K. C.} and Potashnik, {S. J.} and Wang, {R. F.} and Chun, {S. H.} and P. Schiffer and N. Samarth and Seong, {M. J.} and A. Mascarenhas and E. Johnston-Halperin and Myers, {R. C.} and Gossard, {A. C.} and Awschalom, {D. D.}",

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T1 - Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

AU - Ku, K. C.

AU - Potashnik, S. J.

AU - Wang, R. F.

AU - Chun, S. H.

AU - Schiffer, P.

AU - Samarth, N.

AU - Seong, M. J.

AU - Mascarenhas, A.

AU - Johnston-Halperin, E.

AU - Myers, R. C.

AU - Gossard, A. C.

AU - Awschalom, D. D.

PY - 2003/4/7

Y1 - 2003/4/7

N2 - The Curie temperatures up to 150 K were reported in low-temperature annealed [Ga,Mn]As epilayers. The higher Curie temperatures were found to result from an enhanced free hole density. It was found that in addition to the carrier concentration, the sample thickness limited the maximum attainable Curie temperature in the material.

AB - The Curie temperatures up to 150 K were reported in low-temperature annealed [Ga,Mn]As epilayers. The higher Curie temperatures were found to result from an enhanced free hole density. It was found that in addition to the carrier concentration, the sample thickness limited the maximum attainable Curie temperature in the material.

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DO - 10.1063/1.1564285

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

Abstract

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