Highly anisotropic commensurability oscillations in two-dimensional holes at the GaAs/AlGaAs (3 1 1)A interface

J. B. Yau, J. P. Lu, H. C. Manoharan, M. Shayegan

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Measurements of commensurability oscillations in GaAs/AlGaAs two-dimensional (2D) hole systems grown on GaAs (3 1 1)A substrates reveal a remarkable anisotropy: the amplitude of the measured commensurability oscillations along the [2̄ 3 3] direction is about 100 times larger than along [0 1 1̄]. For 2D electron systems at similar interfaces, however, we observe nearly isotropic oscillations, suggesting that the anomalous anisotropy is intrinsic to GaAs 2D holes at the (3 1 1)A interface.

Original languageEnglish (US)
Pages (from-to)453-456
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume6
Issue number1
DOIs
StatePublished - Feb 2000
Event13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can
Duration: Aug 1 1999Aug 6 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Highly anisotropic commensurability oscillations in two-dimensional holes at the GaAs/AlGaAs (3 1 1)A interface'. Together they form a unique fingerprint.

  • Cite this