Abstract
Optimized quantum cascade (QC) lasers function in pulsed mode up to 425 K heatsink temperature were demonstrated, where they display approximately 20 mW of peak output power at a wavelength of approximately 8.4 μm. Laser characterization at these temperatures was performed using a room temperature HgCdTe photovoltaic detector, thus demonstrating an entirely uncooled emitter-detector system. For the high temperature operation, a mature, so-called `three-well vertical transition active region' QC laser design, using InGaAs/AlInAs multiquantum wells grown lattice matched to InP by molecular beam epitaxy (MBE) was chosen.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 723-725 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 36 |
| Issue number | 8 |
| DOIs | |
| State | Published - Apr 13 2000 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering