High temperature (T≥425 K) pulsed operation of quantum cascade lasers

Claire F. Gmachl; A. Tredicucci; F. Capasso; A. L. Hutchinson; D. L. Sivco; A. M. Sergent; T. Mentzel; A. Y. Cho

doi:10.1049/el:20000583

High temperature (T≥425 K) pulsed operation of quantum cascade lasers

Claire F. Gmachl, A. Tredicucci, F. Capasso, A. L. Hutchinson, D. L. Sivco, A. M. Sergent, T. Mentzel, A. Y. Cho

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16 Scopus citations

Abstract

Optimized quantum cascade (QC) lasers function in pulsed mode up to 425 K heatsink temperature were demonstrated, where they display approximately 20 mW of peak output power at a wavelength of approximately 8.4 μm. Laser characterization at these temperatures was performed using a room temperature HgCdTe photovoltaic detector, thus demonstrating an entirely uncooled emitter-detector system. For the high temperature operation, a mature, so-called `three-well vertical transition active region' QC laser design, using InGaAs/AlInAs multiquantum wells grown lattice matched to InP by molecular beam epitaxy (MBE) was chosen.

Original language	English (US)
Pages (from-to)	723-725
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	8
DOIs	https://doi.org/10.1049/el:20000583
State	Published - Apr 13 2000

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20000583

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title = "High temperature (T≥425 K) pulsed operation of quantum cascade lasers",

abstract = "Optimized quantum cascade (QC) lasers function in pulsed mode up to 425 K heatsink temperature were demonstrated, where they display approximately 20 mW of peak output power at a wavelength of approximately 8.4 μm. Laser characterization at these temperatures was performed using a room temperature HgCdTe photovoltaic detector, thus demonstrating an entirely uncooled emitter-detector system. For the high temperature operation, a mature, so-called `three-well vertical transition active region' QC laser design, using InGaAs/AlInAs multiquantum wells grown lattice matched to InP by molecular beam epitaxy (MBE) was chosen.",

author = "Gmachl, {Claire F.} and A. Tredicucci and F. Capasso and Hutchinson, {A. L.} and Sivco, {D. L.} and Sergent, {A. M.} and T. Mentzel and Cho, {A. Y.}",

year = "2000",

month = apr,

day = "13",

doi = "10.1049/el:20000583",

language = "English (US)",

volume = "36",

pages = "723--725",

journal = "Electronics Letters",

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publisher = "John Wiley & Sons Inc.",

number = "8",

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TY - JOUR

T1 - High temperature (T≥425 K) pulsed operation of quantum cascade lasers

AU - Gmachl, Claire F.

AU - Tredicucci, A.

AU - Capasso, F.

AU - Hutchinson, A. L.

AU - Sivco, D. L.

AU - Sergent, A. M.

AU - Mentzel, T.

AU - Cho, A. Y.

PY - 2000/4/13

Y1 - 2000/4/13

N2 - Optimized quantum cascade (QC) lasers function in pulsed mode up to 425 K heatsink temperature were demonstrated, where they display approximately 20 mW of peak output power at a wavelength of approximately 8.4 μm. Laser characterization at these temperatures was performed using a room temperature HgCdTe photovoltaic detector, thus demonstrating an entirely uncooled emitter-detector system. For the high temperature operation, a mature, so-called `three-well vertical transition active region' QC laser design, using InGaAs/AlInAs multiquantum wells grown lattice matched to InP by molecular beam epitaxy (MBE) was chosen.

AB - Optimized quantum cascade (QC) lasers function in pulsed mode up to 425 K heatsink temperature were demonstrated, where they display approximately 20 mW of peak output power at a wavelength of approximately 8.4 μm. Laser characterization at these temperatures was performed using a room temperature HgCdTe photovoltaic detector, thus demonstrating an entirely uncooled emitter-detector system. For the high temperature operation, a mature, so-called `three-well vertical transition active region' QC laser design, using InGaAs/AlInAs multiquantum wells grown lattice matched to InP by molecular beam epitaxy (MBE) was chosen.

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U2 - 10.1049/el:20000583

DO - 10.1049/el:20000583

M3 - Article

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VL - 36

SP - 723

EP - 725

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

High temperature (T≥425 K) pulsed operation of quantum cascade lasers

Abstract

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