High temperature (T≥425 K) pulsed operation of quantum cascade lasers

Claire F. Gmachl, A. Tredicucci, F. Capasso, A. L. Hutchinson, D. L. Sivco, A. M. Sergent, T. Mentzel, A. Y. Cho

Research output: Contribution to journalArticle

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Abstract

Optimized quantum cascade (QC) lasers function in pulsed mode up to 425 K heatsink temperature were demonstrated, where they display approximately 20 mW of peak output power at a wavelength of approximately 8.4 μm. Laser characterization at these temperatures was performed using a room temperature HgCdTe photovoltaic detector, thus demonstrating an entirely uncooled emitter-detector system. For the high temperature operation, a mature, so-called `three-well vertical transition active region' QC laser design, using InGaAs/AlInAs multiquantum wells grown lattice matched to InP by molecular beam epitaxy (MBE) was chosen.

Original languageEnglish (US)
Pages (from-to)723-725
Number of pages3
JournalElectronics Letters
Volume36
Issue number8
DOIs
StatePublished - Apr 13 2000

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Gmachl, C. F., Tredicucci, A., Capasso, F., Hutchinson, A. L., Sivco, D. L., Sergent, A. M., Mentzel, T., & Cho, A. Y. (2000). High temperature (T≥425 K) pulsed operation of quantum cascade lasers. Electronics Letters, 36(8), 723-725. https://doi.org/10.1049/el:20000583