High Temperature (77–300 K) Photo- and Electroluminescence in S i/S i1-x G e x Heterostructures

James C. Sturm, Anthony St Amour, Qun Mi, Lori C. Lenchyshyn, Michael L.W. Thewalt

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20 Scopus citations


The photo- and electro-luminescence of strained Si1- x Ge x /Si heterostructures on Si(100) substrates from 77 K to 300 K has been investigated both experimentally and by quantitative modelling. The key experimental features are very broad linewidths and an exponential drop in the luminescence at high temperatures with a larger Ge fraction corresponding to a higher temperature before the drop begins. These phenomena were accurately explained by an electron-hole plasma from high carrier densities in the quantum well and by an excessively low effective lifetime in the silicon cladding region.

Original languageEnglish (US)
Pages (from-to)2329
Number of pages1
JournalJapanese Journal of Applied Physics
Issue number4S
StatePublished - Apr 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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