High Temperature (77–300 K) Photo- and Electroluminescence in S i/S i1-x G e x Heterostructures

James C. Sturm, Anthony St Amour, Qun Mi, Lori C. Lenchyshyn, Michael L.W. Thewalt

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20 Scopus citations


The photo- and electro-luminescence of strained Si1- x Ge x /Si heterostructures on Si(100) substrates from 77 K to 300 K has been investigated both experimentally and by quantitative modelling. The key experimental features are very broad linewidths and an exponential drop in the luminescence at high temperatures with a larger Ge fraction corresponding to a higher temperature before the drop begins. These phenomena were accurately explained by an electron-hole plasma from high carrier densities in the quantum well and by an excessively low effective lifetime in the silicon cladding region.

Original languageEnglish (US)
Number of pages1
JournalJapanese Journal of Applied Physics
Issue number4S
StatePublished - Apr 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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