High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates

Ke Long, Alexis Kattamis, I. Chun Cheng, Ying X. Gao, Helena Gleskova, Sigurd Wagner, James C. Sturm

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


Amorphous silicon (a-Si) thin film transistors (TFT's) were fabricated on free-standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a-Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.

Original languageEnglish (US)
Article numberP-24
Pages (from-to)313-315
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Issue number1
StatePublished - 2005
EventSID Symposium Digest of Technical Papers - Boston, MA, United States
Duration: Jul 29 2004Jul 29 2004

All Science Journal Classification (ASJC) codes

  • General Engineering


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