High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates

Ke Long; Alexis Kattamis; I. Chun Cheng; Ying X. Gao; Helena Gleskova; Sigurd Wagner; James C. Sturm

doi:10.1889/1.2036433

High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates

Ke Long, Alexis Kattamis, I. Chun Cheng, Ying X. Gao, Helena Gleskova, Sigurd Wagner, James C. Sturm

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

Amorphous silicon (a-Si) thin film transistors (TFT's) were fabricated on free-standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a-Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.

Original language	English (US)
Article number	P-24
Pages (from-to)	313-315
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	36
Issue number	1
DOIs	https://doi.org/10.1889/1.2036433
State	Published - 2005
Event	SID Symposium Digest of Technical Papers - Boston, MA, United States Duration: Jul 29 2004 → Jul 29 2004

All Science Journal Classification (ASJC) codes

General Engineering

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10.1889/1.2036433

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title = "High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates",

abstract = "Amorphous silicon (a-Si) thin film transistors (TFT's) were fabricated on free-standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a-Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.",

author = "Ke Long and Alexis Kattamis and Cheng, {I. Chun} and Gao, {Ying X.} and Helena Gleskova and Sigurd Wagner and Sturm, {James C.}",

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T1 - High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates

AU - Long, Ke

AU - Kattamis, Alexis

AU - Cheng, I. Chun

AU - Gao, Ying X.

AU - Gleskova, Helena

AU - Wagner, Sigurd

AU - Sturm, James C.

PY - 2005

Y1 - 2005

N2 - Amorphous silicon (a-Si) thin film transistors (TFT's) were fabricated on free-standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a-Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.

AB - Amorphous silicon (a-Si) thin film transistors (TFT's) were fabricated on free-standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a-Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.

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EP - 315

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

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ER -

High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates

Abstract

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