High-speed GaAs metal-semiconductor-metal photodetcetors with sub-0.1 μm finger-width and finger-spacing

Stephen Y. Chou; Y. Liu; P. B. Fischer

doi:10.1117/12.44929

High-speed GaAs metal-semiconductor-metal photodetcetors with sub-0.1 μm finger-width and finger-spacing

Stephen Y. Chou, Y. Liu, P. B. Fischer

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have fabricated metal-semiconductor-metal photo-detectors with sub-100-nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. DC measure-ment shows that they have low dark current and high sensitivity. Monte-Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 THz.

Original language	English (US)
Pages (from-to)	243-247
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1474
DOIs	https://doi.org/10.1117/12.44929
State	Published - Sep 1 1991
Externally published	Yes
Event	Optical Technology for Signal Processing Systems 1991 - Orlando, United States Duration: Apr 1 1991 → …

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.44929

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title = "High-speed GaAs metal-semiconductor-metal photodetcetors with sub-0.1 μm finger-width and finger-spacing",

abstract = "We have fabricated metal-semiconductor-metal photo-detectors with sub-100-nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. DC measure-ment shows that they have low dark current and high sensitivity. Monte-Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 THz.",

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year = "1991",

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AU - Chou, Stephen Y.

AU - Liu, Y.

AU - Fischer, P. B.

PY - 1991/9/1

Y1 - 1991/9/1

N2 - We have fabricated metal-semiconductor-metal photo-detectors with sub-100-nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. DC measure-ment shows that they have low dark current and high sensitivity. Monte-Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 THz.

AB - We have fabricated metal-semiconductor-metal photo-detectors with sub-100-nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. DC measure-ment shows that they have low dark current and high sensitivity. Monte-Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 THz.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optical Technology for Signal Processing Systems 1991

Y2 - 1 April 1991

ER -

High-speed GaAs metal-semiconductor-metal photodetcetors with sub-0.1 μm finger-width and finger-spacing

Abstract

All Science Journal Classification (ASJC) codes

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