High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

Yifei Huang, Bahman Hekmatshoar, Sigurd Wagner, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time [1] and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage [2]. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of> 10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.

Original languageEnglish (US)
Title of host publication68th Device Research Conference, DRC 2010
Pages179-180
Number of pages2
DOIs
StatePublished - Oct 11 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: Jun 21 2010Jun 23 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other68th Device Research Conference, DRC 2010
CountryUnited States
CityNotre Dame, IN
Period6/21/106/23/10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Huang, Y., Hekmatshoar, B., Wagner, S., & Sturm, J. C. (2010). High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh. In 68th Device Research Conference, DRC 2010 (pp. 179-180). [5551896] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2010.5551896