High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

Yifei Huang; Bahman Hekmatshoar; Sigurd Wagner; James C. Sturm

doi:10.1109/DRC.2010.5551896

High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

Yifei Huang, Bahman Hekmatshoar, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time [1] and (ii) strong dependence of drain saturation current (I_D,SAT) on drain voltage [2]. In this study, we present (i) a new device structure that eliminates I_D,SAT dependence on drain voltage; (ii) room-temperature retention time of> 10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.

Original language	English (US)
Title of host publication	68th Device Research Conference, DRC 2010
Pages	179-180
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2010.5551896
State	Published - 2010
Event	68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States Duration: Jun 21 2010 → Jun 23 2010

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	68th Device Research Conference, DRC 2010
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/10 → 6/23/10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2010.5551896

Cite this

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title = "High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh",

abstract = "Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time [1] and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage [2]. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of> 10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.",

author = "Yifei Huang and Bahman Hekmatshoar and Sigurd Wagner and Sturm, {James C.}",

year = "2010",

doi = "10.1109/DRC.2010.5551896",

language = "English (US)",

isbn = "9781424478705",

series = "Device Research Conference - Conference Digest, DRC",

pages = "179--180",

booktitle = "68th Device Research Conference, DRC 2010",

note = "68th Device Research Conference, DRC 2010 ; Conference date: 21-06-2010 Through 23-06-2010",

}

Huang, Y, Hekmatshoar, B, Wagner, S & Sturm, JC 2010, High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh. in 68th Device Research Conference, DRC 2010., 5551896, Device Research Conference - Conference Digest, DRC, pp. 179-180, 68th Device Research Conference, DRC 2010, Notre Dame, IN, United States, 6/21/10. https://doi.org/10.1109/DRC.2010.5551896

High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh. / Huang, Yifei; Hekmatshoar, Bahman; Wagner, Sigurd et al.
68th Device Research Conference, DRC 2010. 2010. p. 179-180 5551896 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

AU - Huang, Yifei

AU - Hekmatshoar, Bahman

AU - Wagner, Sigurd

AU - Sturm, James C.

PY - 2010

Y1 - 2010

N2 - Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time [1] and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage [2]. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of> 10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.

AB - Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time [1] and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage [2]. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of> 10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh.

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T3 - Device Research Conference - Conference Digest, DRC

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BT - 68th Device Research Conference, DRC 2010

T2 - 68th Device Research Conference, DRC 2010

Y2 - 21 June 2010 through 23 June 2010

ER -

High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

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