Abstract
Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh and providing displays with the ability to store images without power.
Original language | English (US) |
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Title of host publication | Thin Film Transistors 10, TFT 10 |
Pages | 365-373 |
Number of pages | 9 |
Edition | 5 |
DOIs | |
State | Published - Dec 1 2010 |
Event | 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States Duration: Oct 11 2010 → Oct 15 2010 |
Publication series
Name | ECS Transactions |
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Number | 5 |
Volume | 33 |
ISSN (Print) | 1938-5862 |
ISSN (Electronic) | 1938-6737 |
Other
Other | 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting |
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Country | United States |
City | Las Vegas, NV |
Period | 10/11/10 → 10/15/10 |
All Science Journal Classification (ASJC) codes
- Engineering(all)