@inproceedings{685dbc4f94aa4c7a983a2276ccc7a0c2,
title = "High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh",
abstract = "Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh and providing displays with the ability to store images without power.",
author = "Yifei Huang and Bahman Hekmatshoar and Sigurd Wagner and Sturm, {James C.}",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3481259",
language = "English (US)",
isbn = "9781566778244",
series = "ECS Transactions",
number = "5",
pages = "365--373",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",
note = "10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting ; Conference date: 11-10-2010 Through 15-10-2010",
}