High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

Yifei Huang; Bahman Hekmatshoar; Sigurd Wagner; James C. Sturm

doi:10.1149/1.3481259

High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

Yifei Huang, Bahman Hekmatshoar, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time and (ii) strong dependence of drain saturation current (I_D,SAT) on drain voltage. In this study, we present (i) a new device structure that eliminates I_D,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh and providing displays with the ability to store images without power.

Original language	English (US)
Title of host publication	Thin Film Transistors 10, TFT 10
Pages	365-373
Number of pages	9
Edition	5
DOIs	https://doi.org/10.1149/1.3481259
State	Published - Dec 1 2010
Event	10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States Duration: Oct 11 2010 → Oct 15 2010

Publication series

Name	ECS Transactions
Number	5
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
Country	United States
City	Las Vegas, NV
Period	10/11/10 → 10/15/10

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.3481259

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title = "High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh",

abstract = "Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh and providing displays with the ability to store images without power.",

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Huang, Y, Hekmatshoar, B, Wagner, S & Sturm, JC 2010, High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh. in Thin Film Transistors 10, TFT 10. 5 edn, ECS Transactions, no. 5, vol. 33, pp. 365-373, 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting, Las Vegas, NV, United States, 10/11/10. https://doi.org/10.1149/1.3481259

High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh. / Huang, Yifei; Hekmatshoar, Bahman; Wagner, Sigurd; Sturm, James C.

Thin Film Transistors 10, TFT 10. 5. ed. 2010. p. 365-373 (ECS Transactions; Vol. 33, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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