High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh

Yifei Huang, Bahman Hekmatshoar, Sigurd Wagner, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Existing a-Si floating gate TFT (FG-TFT) nonvolatile memory suffers from two drawbacks: (i) short retention time and (ii) strong dependence of drain saturation current (ID,SAT) on drain voltage. In this study, we present (i) a new device structure that eliminates ID,SAT dependence on drain voltage; (ii) room-temperature retention time of >10 years; and (iii) the integration of this new TFT memory into AMOLED pixels, enabling displays without refresh and providing displays with the ability to store images without power.

Original languageEnglish (US)
Title of host publicationThin Film Transistors 10, TFT 10
Pages365-373
Number of pages9
Edition5
DOIs
StatePublished - Dec 1 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Huang, Y., Hekmatshoar, B., Wagner, S., & Sturm, J. C. (2010). High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 365-373). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481259