High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers

Yueh Lin Loo; Julia W.P. Hsu; Robert L. Willett; Kirk W. Baldwin; Ken W. West; John A. Rogers

doi:10.1116/1.1523405

High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers

Yueh Lin Loo
, Julia W.P. Hsu
, Robert L. Willett
, Kirk W. Baldwin
, Ken W. West
, John A. Rogers

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

Nanotransfer printing is a highly versatile contact printing technique capable of nanoscale resolution over large areas. This paper describes its use with a compound semiconductor substrate. With a 1,8-octanedithiol monolayer, gold patterns are transferred from elastomeric stamps onto different cryatallographic planes of GaAs. Pattern transfer is fast (<15 s) and occurs at ambient conditions.

Original language	English (US)
Pages (from-to)	2853-2856
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1523405
State	Published - Nov 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.1523405

Cite this

@article{d0ea0db9f5ac4ecc8229abc822c9501c,

title = "High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers",

abstract = "Nanotransfer printing is a highly versatile contact printing technique capable of nanoscale resolution over large areas. This paper describes its use with a compound semiconductor substrate. With a 1,8-octanedithiol monolayer, gold patterns are transferred from elastomeric stamps onto different cryatallographic planes of GaAs. Pattern transfer is fast (<15 s) and occurs at ambient conditions.",

author = "Loo, \{Yueh Lin\} and Hsu, \{Julia W.P.\} and Willett, \{Robert L.\} and Baldwin, \{Kirk W.\} and West, \{Ken W.\} and Rogers, \{John A.\}",

year = "2002",

month = nov,

doi = "10.1116/1.1523405",

language = "English (US)",

volume = "20",

pages = "2853--2856",

journal = "Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena",

issn = "0734-211X",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers

AU - Loo, Yueh Lin

AU - Hsu, Julia W.P.

AU - Willett, Robert L.

AU - Baldwin, Kirk W.

AU - West, Ken W.

AU - Rogers, John A.

PY - 2002/11

Y1 - 2002/11

N2 - Nanotransfer printing is a highly versatile contact printing technique capable of nanoscale resolution over large areas. This paper describes its use with a compound semiconductor substrate. With a 1,8-octanedithiol monolayer, gold patterns are transferred from elastomeric stamps onto different cryatallographic planes of GaAs. Pattern transfer is fast (<15 s) and occurs at ambient conditions.

AB - Nanotransfer printing is a highly versatile contact printing technique capable of nanoscale resolution over large areas. This paper describes its use with a compound semiconductor substrate. With a 1,8-octanedithiol monolayer, gold patterns are transferred from elastomeric stamps onto different cryatallographic planes of GaAs. Pattern transfer is fast (<15 s) and occurs at ambient conditions.

UR - https://www.scopus.com/pages/publications/0036883184

UR - https://www.scopus.com/pages/publications/0036883184#tab=citedBy

U2 - 10.1116/1.1523405

DO - 10.1116/1.1523405

M3 - Article

AN - SCOPUS:0036883184

SN - 0734-211X

VL - 20

SP - 2853

EP - 2856

JO - Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science and Technology B: Microelectronics Processing and Phenomena

IS - 6

ER -

High-resolution transfer printing on GaAs surfaces using alkane dithiol monolayers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this